A surprising report out of Korea states that chips Samsung Foundry says will be made with its 2nm process node might actually be produced with its second-generation 3nm node. If this sounds confusing and misleading, you’re absolutely correct. Imagine being a Samsung Foundry client expecting to have chips made using the cutting-edge 2nm node next year and finding out that they were produced using the second-gen 3nm node.
Samsung Foundry is calling its second-generation 3nm node 2nm
Something else to consider. Another reason why Samsung Foundry might be able to get by with this name change is that, unlike TSMC, Samsung Foundryis already using Gate-All-Around (GAA) transistors with its 3nm process node. TSMC is switching from FinFET to GAA transistors with its 2nm production in 2025. GAA transistors have a gate covering all four sides of the channel thanks to the use of vertically placed horizontal nanosheets.
GAA transistors reduce current leaks and increase the drive current. This results in improved electrical signals passing through and in between the transistors improving the performance of the chip.
We’re sure to hear more about this from Samsung Foundry and perhaps even from TSMC and Intel. Keep checking in with us for the latest.